Invention Grant
- Patent Title: Heat dissipation structures
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Application No.: US17403485Application Date: 2021-08-16
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Publication No.: US11749584B2Publication Date: 2023-09-05
- Inventor: Po-Hsiang Huang , Chin-Chou Liu , Chin-Her Chien , Fong-yuan Chang , Hui Yu Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- The original application number of the division: US16433967 2019.06.06
- Main IPC: H01L23/42
- IPC: H01L23/42 ; H01L25/065 ; H01L25/00 ; H01L23/31 ; H01L23/367

Abstract:
The present disclosure describes heat dissipating structures that can be formed either in functional or non-functional areas of three-dimensional system on integrated chip structures. In some embodiments, the heat dissipating structures maintain an average operating temperature of memory dies or chips below about 90° C. For example, a structure includes a stack with chip layers, where each chip layer includes one or more chips and an edge portion. The structure further includes a thermal interface material disposed on the edge portion of each chip layer, a thermal interface material layer disposed over a top chip layer of the stack, and a heat sink over the thermal interface material layer.
Public/Granted literature
- US20210375717A1 HEAT DISSIPATION STRUCTURES Public/Granted day:2021-12-02
Information query
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