Invention Grant
- Patent Title: Semiconductor device having inter-metal dielectric patterns and method for fabricating the same
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Application No.: US17529212Application Date: 2021-11-17
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Publication No.: US11749601B2Publication Date: 2023-09-05
- Inventor: Bin Guo , Hailong Gu , Chin-Chun Huang , Wen Yi Tan
- Applicant: United Semiconductor (Xiamen) Co., Ltd.
- Applicant Address: CN Fujian
- Assignee: United Semiconductor (Xiamen) Co., Ltd.
- Current Assignee: United Semiconductor (Xiamen) Co., Ltd.
- Current Assignee Address: CN Fujian
- Agent Winston Hsu
- Priority: CN 2010079602.6 2020.02.04
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/522 ; H01L21/321
Abstract:
A semiconductor device includes a patterned metal layer on a substrate, via conductors on the patterned metal layer, first inter-metal dielectric (IMD) patterns embedded in the patterned metal layer, and a second IMD pattern surrounding the patterned metal layer. Preferably, the first IMD patterns are between and without overlapping the via conductors in a top view.
Public/Granted literature
- US20220077058A1 SEMICONDUCTOR DEVICE HAVING INTER-METAL DIELECTRIC PATTERNS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-03-10
Information query
IPC分类:
