- Patent Title: Semiconductor structure including one or more antenna structures
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Application No.: US17118017Application Date: 2020-12-10
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Publication No.: US11749625B2Publication Date: 2023-09-05
- Inventor: Feng-Wei Kuo , Wen-Shiang Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L23/538 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01Q9/04 ; H01Q1/52 ; H01L23/31

Abstract:
A semiconductor structure includes a first redistribution structure, wherein the first redistribution structure includes first conductive pattern. The semiconductor structure further includes a die over the first redistribution structure. The semiconductor structure further includes a molding over the first redistribution structure, wherein the molding surrounds the die, and the molding has a first dielectric constant. The semiconductor structure further includes a dielectric member extending through the molding, wherein the dielectric member has a second dielectric constant different from the first dielectric constant. The semiconductor structure further includes a second redistribution structure over the die, the dielectric member and the molding, wherein the second redistribution layer includes an antenna over the dielectric member, and the antenna is electrically connected to the die.
Public/Granted literature
- US20210327833A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-10-21
Information query
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