Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US17242536Application Date: 2021-04-28
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Publication No.: US11749635B2Publication Date: 2023-09-05
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR 20200138389 2020.10.23
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/18 ; H01L25/00 ; H01L25/065

Abstract:
A semiconductor device includes a first insulating layer, wire contacts spaced apart from each other by the first insulating layer, and a bonding wire connected to the wire contacts. Each of the wire contacts includes a base part in the first insulating layer and a protrusion part protruding from inside to outside the first insulating layer. The protrusion parts of the wire contacts are in contact with the bonding wire.
Public/Granted literature
- US20220130791A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2022-04-28
Information query
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