Invention Grant
- Patent Title: Memory circuits
-
Application No.: US17811903Application Date: 2022-07-12
-
Publication No.: US11749664B2Publication Date: 2023-09-05
- Inventor: Yi-Ching Liu , Yih Wang , Chia-En Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/31 ; H01L23/00 ; G11C7/10 ; G11C8/10 ; G11C8/08

Abstract:
A circuit is provided. The circuit includes a first die that includes a memory array, and the memory array includes a plurality of memory cells, a sensing element coupled to the plurality of memory cells, and a first plurality of conductive pads coupled to the sensing element. The circuit also includes a second die that includes an address decoder associated with the memory array of the first die and a second plurality of conductive pads coupled to the address decoder. The first die is coupled to the second die by an interposer. The address decoder of the second die is coupled to the sensing element of the first die. A first voltage swing of the first die is larger than a second voltage swing of the second die.
Public/Granted literature
- US20220359484A1 MEMORY CIRCUITS Public/Granted day:2022-11-10
Information query
IPC分类: