Invention Grant
- Patent Title: ESD protection device
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Application No.: US17739357Application Date: 2022-05-09
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Publication No.: US11749673B2Publication Date: 2023-09-05
- Inventor: Shu-Yu Su , Jam-Wem Lee , Wun-Jie Lin
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04

Abstract:
Systems and methods for protecting a device from an electrostatic discharge (ESD) event are provided. A resistor-capacitor (RC) trigger circuit and a driver circuit are provided. The RC trigger circuit is configured to provide an ESD protection signal to the driver circuit. A discharge circuit includes a first metal oxide semiconductor (MOS) transistor and a second MOS transistor connected in series between a first voltage potential and a second voltage potential. The driver circuit provides one or more signals for turning the first and second MOS transistors on and off.
Public/Granted literature
- US20220262788A1 ESD Protection Device Public/Granted day:2022-08-18
Information query
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