Invention Grant
- Patent Title: Electrostatic discharge protection circuit
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Application No.: US17568915Application Date: 2022-01-05
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Publication No.: US11749674B2Publication Date: 2023-09-05
- Inventor: Xin Li , Zhan Ying
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Anhui
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- Priority: CN 2110356382.1 2021.04.01
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04 ; H02H1/00

Abstract:
An electrostatic discharge (ESD) protection circuit including a monitoring unit, a main discharge transistor, and an auxiliary discharge transistor is provided herein. The monitoring unit is configured to detect an electrostatic pulse caused by accumulation of electrostatic charges. The main discharge transistor and the auxiliary discharge transistor are configured discharge the electrostatic charges to ground end after the electrostatic pulse is detected. A first section of a power supply metal line is coupled to the main discharge transistor and the auxiliary discharge transistor, a third section of the power supply metal line is coupled to an internal circuit protected by the ESD protection circuit, and a second section of the power supply metal line couples the first section to the third section. The power supply metal line includes an angle that is less than 180 degrees at a contact position between the second section and the first section.
Public/Granted literature
- US20220320076A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2022-10-06
Information query
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