Invention Grant
- Patent Title: Method for forming photoelectric conversion element of image sensing device
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Application No.: US16905634Application Date: 2020-06-18
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Publication No.: US11749704B2Publication Date: 2023-09-05
- Inventor: Soon Yeol Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-si
- Agency: Perkins Coie LLP
- Priority: KR 20190139391 2019.11.04
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N25/77

Abstract:
An image sensing device and a method for forming the same are disclosed. The image sensing device includes a first substrate, first photoelectric conversion elements formed in the first substrate and configured to generate photocharges in response to a reception of light, a second substrate formed over the first substrate, and second photoelectric conversion elements formed in the second substrate and configured to generate photocharges in response to a reception of light, the second photoelectric conversion elements contacting corresponding the first photoelectric conversion elements, respectively.
Public/Granted literature
- US20210134874A1 IMAGE SENSING DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2021-05-06
Information query
IPC分类: