Invention Grant
- Patent Title: Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor
-
Application No.: US17851836Application Date: 2022-06-28
-
Publication No.: US11749713B2Publication Date: 2023-09-05
- Inventor: Jeongil Bang , Seungwoo Jang , Hyosik Mun , Younggeun Park , Jooho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR 20200084344 2020.07.08
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H10B53/30 ; H01L21/02

Abstract:
A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.
Public/Granted literature
Information query
IPC分类: