Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17351244Application Date: 2021-06-18
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Publication No.: US11749718B2Publication Date: 2023-09-05
- Inventor: Yi-Tse Hung , Ang-Sheng Chou , Hung-Li Chiang , Tzu-Chiang Chen , Chao-Ching Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L23/36

Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a heat transfer layer disposed over a substrate, a channel material layer, a gate structure and source and drain terminals. The channel material layer has a first surface and a second surface opposite to the first surface, and the channel material layer is disposed on the heat transfer layer with the first surface in contact with the heat transfer layer. The gate structure is disposed above the channel material layer. The source and drain terminals are in contact with the channel material layer and located at two opposite sides of the gate structure.
Public/Granted literature
- US20220285495A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-09-08
Information query
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