Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17394278Application Date: 2021-08-04
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Publication No.: US11749731B2Publication Date: 2023-09-05
- Inventor: Susumu Yamada , Satoru Sugita , Kenji Komiya
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: POSZ LAW GROUP, PLC
- Priority: JP 19023694 2019.02.13
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L23/34 ; H01L23/495 ; H01L23/00 ; H01L29/06

Abstract:
A semiconductor device includes a semiconductor chip, first and second conductive members disposed on opposite sides of the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a surface electrode and gate wirings. The semiconductor substrate has active regions formed with elements, and an inactive region not formed with an element. The inactive region includes an inter-inactive portion disposed between at least two active regions and an outer peripheral inactive portion disposed on an outer periphery of the at least two active regions. The surface electrode is disposed to continuously extend above the at least two active regions and the inter-inactive portion. The gate wirings are disposed above the inactive region, and include a first gate wiring disposed on an outer periphery of the surface electrode, and a second gate electrode disposed at a position facing the surface electrode.
Public/Granted literature
- US20210367048A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-11-25
Information query
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