Invention Grant
- Patent Title: Radio frequency front end (RFFE) hetero-integration
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Application No.: US17244293Application Date: 2021-04-29
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Publication No.: US11749746B2Publication Date: 2023-09-05
- Inventor: Ranadeep Dutta , Jonghae Kim , Je-Hsiung Lan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: QUALCOMM INCORPORATED
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L23/14 ; H01L23/498 ; H01L23/00 ; H01L29/205 ; H01L29/66
Abstract:
In an aspect, a heterojunction bipolar transistor (HBT) includes a sub-collector disposed on a collector. The collector has a collector contact disposed on the sub-collector and located on a first side of the heterojunction bipolar transistor. The HBT includes an emitter disposed on an emitter cap. The emitter has an emitter contact disposed on the emitter cap and located on a second side of the heterojunction bipolar transistor. The HBT includes a base having a base contact located on the second side of the heterojunction bipolar transistor.
Public/Granted literature
- US20220352359A1 RADIO FREQUENCY FRONT END (RFFE) HETERO-INTEGRATION Public/Granted day:2022-11-03
Information query
IPC分类:
