Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17371752Application Date: 2021-07-09
-
Publication No.: US11749749B2Publication Date: 2023-09-05
- Inventor: Takui Sakaguchi , Masatoshi Aketa , Yuki Nakano
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: XSENSUS LLP
- Priority: JP 17011609 2017.01.25
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/04 ; H01L29/06 ; H01L29/16 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor layer having a first main surface on one side and a second main surface on the other side, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first main surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first main surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first main surface electrode covering the diode region and the first conductivity type region on the first main surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.
Public/Granted literature
- US20210336049A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-10-28
Information query
IPC分类:
