A split-gate trench device chip has an active region in which a plurality of active trenches are disposed. The active region is enclosed by termination trenches disposed in a termination region, which extends to the edges of the chip. A gate metal lead is disposed on the device surface. The gate metal lead makes contact to gate electrodes in the active trenches through contact holes disposed in the active region. A source or a drain metal lead is also disposed on the surface. The source or the drain metal lead makes contact to the field plate electrodes through contact holes disposed outside the active region. Each active trench in the active region has a first end merge into a first termination trench and a second end separated from an adjacent second termination trench.