Invention Grant
- Patent Title: Composite etch stop layers for sensor devices
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Application No.: US17744398Application Date: 2022-05-13
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Publication No.: US11749760B2Publication Date: 2023-09-05
- Inventor: Cheng-Han Lin , Chao-Ching Chang , Yi-Ming Lin , Yen-Ting Chou , Yen-Chang Chen , Sheng-Chan Li , Cheng-Hsien Chou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US16845005 2020.04.09
- Main IPC: H01L31/0216
- IPC: H01L31/0216 ; H01L31/18 ; H01L27/146 ; H01L31/0232

Abstract:
A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.
Public/Granted literature
- US20220278242A1 COMPOSITE ETCH STOP LAYERS FOR SENSOR DEVICES Public/Granted day:2022-09-01
Information query
IPC分类: