Invention Grant
- Patent Title: Semiconductor device and power conversion device
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Application No.: US17415728Application Date: 2019-02-01
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Publication No.: US11750090B2Publication Date: 2023-09-05
- Inventor: Chihiro Kawahara , Shinya Yano
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2019/003662 2019.02.01
- International Announcement: WO2020/157963A 2020.08.06
- Date entered country: 2021-06-18
- Main IPC: H02M7/219
- IPC: H02M7/219 ; H02M3/00 ; H02M1/00 ; H02M1/34 ; H02M3/155 ; H02M5/293 ; H02M7/00 ; H02M7/5387

Abstract:
A semiconductor device includes a substrate having a first surface, a first electrode, a second electrode and a third electrode formed on the first surface, a first semiconductor element and a second semiconductor element disposed in the interior of the substrate, a first wiring group electrically connecting the first electrode to the first semiconductor element, and a fourth wiring group electrically connecting the second semiconductor element to the second electrode. The first wiring group includes a first connection part disposed in the interior of the substrate. The fourth wiring group includes a second connection part disposed in the interior of the substrate. When a voltage is applied between the first electrode and the third electrode to cause current to flow through the second electrode, a direction of current flowing through first connection part is opposite to a direction of current flowing through the second connection part.
Public/Granted literature
- US20220077771A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2022-03-10
Information query
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