Semiconductor device and power conversion device
Abstract:
A semiconductor device includes a substrate having a first surface, a first electrode, a second electrode and a third electrode formed on the first surface, a first semiconductor element and a second semiconductor element disposed in the interior of the substrate, a first wiring group electrically connecting the first electrode to the first semiconductor element, and a fourth wiring group electrically connecting the second semiconductor element to the second electrode. The first wiring group includes a first connection part disposed in the interior of the substrate. The fourth wiring group includes a second connection part disposed in the interior of the substrate. When a voltage is applied between the first electrode and the third electrode to cause current to flow through the second electrode, a direction of current flowing through first connection part is opposite to a direction of current flowing through the second connection part.
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