Invention Grant
- Patent Title: Imaging element, stacked-type imaging element, and solid-state imaging apparatus
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Application No.: US17900222Application Date: 2022-08-31
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Publication No.: US11750952B2Publication Date: 2023-09-05
- Inventor: Yusuke Sato , Fumihiko Koga
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP 17162541 2017.08.25
- Main IPC: H04N25/79
- IPC: H04N25/79 ; H01L27/146 ; H04N23/10 ; H04N25/77

Abstract:
There is provided an imaging element includes a photoelectric conversion unit that includes a first electrode, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode that has an opposite region opposite to the first electrode via an insulating layer, and a transfer control electrode that is opposite to the first electrode and the charge storage electrode via the insulating layer, and the photoelectric conversion layer is disposed above at least the charge storage electrode via the insulating layer.
Public/Granted literature
- US20230007206A1 IMAGING ELEMENT, STACKED-TYPE IMAGING ELEMENT, AND SOLID-STATE IMAGING APPARATUS Public/Granted day:2023-01-05
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