Invention Grant
- Patent Title: Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic laver
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Application No.: US17403733Application Date: 2021-08-16
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Publication No.: US11751484B2Publication Date: 2023-09-05
- Inventor: Satoru Araki
- Applicant: Integrated Silicon Solution, (Cayman) Inc.
- Applicant Address: KY Grand Cayman
- Assignee: Integrated Silicon Solution, (Cayman) Inc.
- Current Assignee: Integrated Silicon Solution, (Cayman) Inc.
- Current Assignee Address: KY Grand Cayman
- Main IPC: H10N50/10
- IPC: H10N50/10 ; H10N50/80 ; G11C11/16 ; H01L21/822 ; H01F10/32 ; H10B61/00 ; H10N50/01 ; H10N50/85

Abstract:
A Magnetic Tunnel Junction (MTJ) device can include a reference magnetic layer having one or more trenches disposed therein. One or more sections of a tunnel barrier layer can be disposed on the walls of the one or more trenches. One or more sections of a free magnetic layer can be disposed on the one or more sections of the tunnel barrier layer in the one or more trenches. One or more sections of a conductive layer can be disposed on the one or more sections of the free magnetic layer in the one or more trenches. One or more insulator blocks can be disposed between corresponding sections of the tunnel barrier layer, corresponding sections of the free magnetic layer and corresponding sections of the conductive layer in the one or more trenches.
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