Invention Grant
- Patent Title: Method for measuring extremely low oxygen concentration in silicon wafer
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Application No.: US17294741Application Date: 2019-12-04
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Publication No.: US11754497B2Publication Date: 2023-09-12
- Inventor: Hiroyuki Saito
- Applicant: GLOBALWAFERS JAPAN CO., LTD.
- Applicant Address: JP Niigata
- Assignee: GLOBALWAFERS JAPAN CO., LTD.
- Current Assignee: GLOBALWAFERS JAPAN CO., LTD.
- Current Assignee Address: JP Niigata
- Agency: BUCHANAN INGERSOLL & ROONEY PC
- Priority: JP 18235613 2018.12.17
- International Application: PCT/JP2019/047366 2019.12.04
- International Announcement: WO2020/129639A 2020.06.25
- Date entered country: 2021-05-18
- Main IPC: G01N21/35
- IPC: G01N21/35 ; G01N21/3563
Abstract:
Provided is a method for measuring interstitial oxygen concentration in a silicon wafer easily and sensitively using FT-IR. The invention provides a method for measuring an extremely low oxygen concentration of
Public/Granted literature
- US20220018761A1 METHOD FOR MEASURING EXTREMELY LOW OXYGEN CONCENTRATION IN SILICON WAFER Public/Granted day:2022-01-20
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