Invention Grant
- Patent Title: Hetergenous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform
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Application No.: US16953574Application Date: 2020-11-20
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Publication No.: US11754865B2Publication Date: 2023-09-12
- Inventor: Moe Soltani , Thomas Kazior
- Applicant: Raytheon BBN Technologies Corp.
- Applicant Address: US MA Cambridge
- Assignee: Raytheon BBN Technologies Corp.
- Current Assignee: Raytheon BBN Technologies Corp.
- Current Assignee Address: US MA Cambridge
- Agency: Lando & Anastasi, LLP
- Main IPC: G01F1/05
- IPC: G01F1/05 ; G02F1/055 ; G02F1/015
Abstract:
A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.
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