Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17517944Application Date: 2021-11-03
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Publication No.: US11756605B2Publication Date: 2023-09-12
- Inventor: Norihiro Saitou
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP 20193762 2020.11.20
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C11/4076 ; G11C11/4093 ; G11C11/4096 ; G11C7/22

Abstract:
A semiconductor device capable of decreasing a jitter component is provided. A first calibration circuit searches a second delay value of a data delay circuit while determining a delay value of a strobe delay circuit to be a first delay value that is larger than the minimum value and smaller than the maximum value. A second calibration circuit determines a first corrected delay value and a second corrected delay value by shifting both the first delay value and the second delay value by the same correction value in a direction toward the minimum value, and sets the first corrected delay value and the second corrected delay value to the strobe delay circuit and the data delay circuit, respectively.
Public/Granted literature
- US20220165324A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-05-26
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