An embodiment memory device comprises a plurality of memory cells, each exhibiting a transconductance depending on a value of a stored bit, a plurality of bit lines associated with respective groups of memory cells, each bit line configured to flow a respective electric current indicative of the bit stored in a selected memory cell of the respective group of memory cells, and a computing circuit providing an output electric quantity indicative of a linear combination of a plurality of input electric quantities. The computing circuit comprises a biasing stage configured to bias each bit line with a respective input electric quantity, the electric current flowing through each bit line based on a product of the respective input electric quantity and the transconductance of the selected memory cell, and a combining stage for combining the electric currents flowing through the plurality of bit lines thereby obtaining the output electric quantity.