Invention Grant
- Patent Title: Memory device and asynchronous multi-plane independent read operation thereof
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Application No.: US17334056Application Date: 2021-05-28
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Publication No.: US11756629B2Publication Date: 2023-09-12
- Inventor: Jialiang Deng , Zhuqin Duan , Lei Shi , Yuesong Pan , Yanlan Liu , Bo Li
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/26 ; G11C16/08 ; G11C16/10 ; G11C16/14 ; H03K19/173

Abstract:
In certain aspects, a method for operating a memory device is disclosed. The memory device includes memory planes and multiplexers (MUXs). Each MUX includes an output coupled to a respective one of the memory planes, a first input receiving a non-asynchronous multi-plane independent (AMPI) read control signal, and a second input receiving an AMPI read control signal. Whether an instruction is an AMPI read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and a corresponding MUX is controlled to enable outputting the AMPI read control signal from the second input to the corresponding memory plane. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and each MUX is controlled to enable outputting the non-AMPI read control signal from the respective first input to the respective memory plane.
Public/Granted literature
- US20220310174A1 MEMORY DEVICE AND ASYNCHRONOUS MULTI-PLANE INDEPENDENT READ OPERATION THEREOF Public/Granted day:2022-09-29
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