Invention Grant
- Patent Title: Semiconductor manufacturing method and apparatus thereof
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Application No.: US17561010Application Date: 2021-12-23
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Publication No.: US11756789B2Publication Date: 2023-09-12
- Inventor: Yung-Yao Lee , Wen-Chih Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US16445674 2019.06.19
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F1/38 ; G03F7/095 ; G03F1/70 ; H01L21/033 ; H04B10/43 ; H01L31/12 ; G02B6/42 ; H01L21/768 ; G03F7/20 ; G01N21/956 ; G03F7/00

Abstract:
The present disclosure provides an apparatus for manufacturing a semiconductor structure. The apparatus includes a stage, an optical transceiver over the stage, configured to obtain a first profile of a first surface of a substrate, an acoustic transceiver over the stage, configured to obtain a second profile of a top surface of a photo-sensitive layer over the substrate, wherein the stage is adapted to be displaced based on the first profile and the second profile.
Public/Granted literature
- US20220115229A1 SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF Public/Granted day:2022-04-14
Information query
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