Invention Grant
- Patent Title: Reflectance measurement system and method thereof
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Application No.: US16444792Application Date: 2019-06-18
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Publication No.: US11756840B2Publication Date: 2023-09-12
- Inventor: Yan-Hong Liu , Daniel M. Y. Yang , Che-Fu Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/687 ; H01L21/67 ; H01L21/3213 ; G01N21/55 ; H05K3/06

Abstract:
A system includes a factory interface, an etching tool, and at least one measuring device. The factory interface is configured to carry a wafer. The etching tool is coupled to the factory interface and configured to process the wafer transferred from the factory interface. The at least one measuring device is equipped in the factory interface, the etching tool, or the combination thereof. The at least one measuring device is configured to perform real-time measurements of reflectance from the wafer that is carried in the factory interface or the etching tool.
Public/Granted literature
- US20200098648A1 REFLECTANCE MEASUREMENT SYSTEM AND METHOD THEREOF Public/Granted day:2020-03-26
Information query
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