Invention Grant
- Patent Title: Method for testing semiconductor elements
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Application No.: US17393896Application Date: 2021-08-04
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Publication No.: US11756841B2Publication Date: 2023-09-12
- Inventor: Shih Hung Lin
- Applicant: Upper ELEC. CO., LTD.
- Applicant Address: VG Tortoal
- Assignee: UPPER ELEC. CO., LTD.
- Current Assignee: UPPER ELEC. CO., LTD.
- Current Assignee Address: VG Tortoal
- Agency: HDLS IPR SERVICES
- Agent Chun-Ming Shih
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00

Abstract:
Disclosed is a method for testing a semiconductor element. The method comprises forming at least one redistribution layer on a chip, utilizing the at least one redistribution layer to test an array of semiconductor elements on the chip, and removing the at least one redistribution layer from the chip, wherein the length of each semiconductor element is between 2-150 μm and the width of each semiconductor element is between 2-150 μm.
Public/Granted literature
- US20220189834A1 METHOD FOR TESTING SEMICONDUCTOR ELEMENTS Public/Granted day:2022-06-16
Information query
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