Invention Grant
- Patent Title: Semiconductor device with alignment marks and method for fabricating the same
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Application No.: US17541754Application Date: 2021-12-03
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Publication No.: US11756893B2Publication Date: 2023-09-12
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00

Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first wafer comprising a first substrate and a plurality of first alignment marks positioned on the first substrate and parallel to each other; and a second wafer positioned on the first wafer and comprising a plurality of second alignment marks positioned above the plurality of first alignment marks. The plurality of second alignment marks are arranged parallel to the plurality of first alignment marks and adjacent to the plurality of first alignment marks in a top-view perspective. The plurality of first alignment marks and the plurality of second alignment marks comprise a fluorescence material.
Public/Granted literature
- US20230178493A1 SEMICONDUCTOR DEVICE WITH ALIGNMENT MARKS AND METHOD FOR FABRICATING THE SAME Public/Granted day:2023-06-08
Information query
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