Invention Grant
- Patent Title: Integrated circuit and method for manufacturing the same
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Application No.: US17363355Application Date: 2021-06-30
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Publication No.: US11756950B2Publication Date: 2023-09-12
- Inventor: Chin-Ho Chang , Yi-Wen Chen , Jaw-Juinn Horng , Yung-Chow Peng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8238 ; H01L27/092

Abstract:
An integrated circuit includes a first circuit with m first units coupled in parallel, any of the first units including one or more first transistors coupled in series, and a second circuit with n second units coupled in parallel, any of the second units including one or more second transistors coupled in series. A gate terminal of the first circuit is coupled to a gate terminal of the second circuit. M and n are different positive integers.
Public/Granted literature
- US20220223579A1 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-07-14
Information query
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