Invention Grant
- Patent Title: Silicon carbide MOSFET with optional asymmetric gate clamp
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Application No.: US17854144Application Date: 2022-06-30
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Publication No.: US11756954B2Publication Date: 2023-09-12
- Inventor: Rahul R. Potera , Carl A. Witt
- Applicant: SemiQ Incorporated
- Applicant Address: US CA Lake Forest
- Assignee: SEMIQ INCORPORATED
- Current Assignee: SEMIQ INCORPORATED
- Current Assignee Address: US CA Lake Forest
- Agency: The Law Offices of Bradley J. Bereznak
- The original application number of the division: US17071695 2020.10.15
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/16 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L21/78 ; H01L21/66 ; H01L29/10 ; H01L29/08
Abstract:
A silicon carbide MOSFET device includes a gate pad area, a main MOSFET area and a secondary MOSFET area. A main source contact is electrically coupled to the source region of each of the main MOSFETs, and a separate secondary source contact is electrically coupled to the source region of each of the secondary MOSFETs. A gate contact electrically connects to each of the insulated gate members of the main and secondary MOSFETs. An asymmetric gate clamping circuit is coupled between the secondary source contact and the gate contact. In a first mode of operation of the MOSFET device the main source contact is electrically coupled with the secondary source contact to activate the gate clamping circuit. When activated, the circuit clamping a gate-to-source voltage to a first clamp voltage in an on-state of the MOSFET device, and to a second clamp voltage in an off-state of the MOSFET device.
Public/Granted literature
- US20220336444A1 Silicon Carbide MOSFET With Optional Asymmetric Gate Clamp Public/Granted day:2022-10-20
Information query
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