Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device

Invention Grant

US11757006B2 Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device 有权

Patent Title: Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device
Application No.: US17875998

Application Date: 2022-07-28
Publication No.: US11757006B2

Publication Date: 2023-09-12
Inventor: Hajime Nago , Jumpei Tajima , Toshiki Hikosaka
Applicant: KABUSHIKI KAISHA TOSHIBA
Applicant Address: JP Tokyo
Assignee: KABUSHIKI KAISHA TOSHIBA
Current Assignee: KABUSHIKI KAISHA TOSHIBA
Current Assignee Address: JP Tokyo
Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
Priority: JP 2020010742 2020.01.27
The original application number of the division: US17014333 2020.09.08
Main IPC: H01L21/02
IPC: H01L21/02 ; H01L29/20 ; H01L29/205 ; H01L29/06 ; C23C16/44 ; C23C16/30 ; H01L29/778

Abstract:

A method for manufacturing a semiconductor device is provided, the method including forming an intermediate region including Alx3Ga1-x3N (0

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理