A semiconductor light receiving element includes a first semiconductor layer, a waveguide type photodiode structure, an optical waveguide structure, and a fourth semiconductor layer. The waveguide type photodiode structure is provided on the first semiconductor layer. The waveguide type photodiode structure includes an optical absorption layer, a second semiconductor layer, a multiplication layer, and a third semiconductor layer. The optical waveguide structure is provided on the first semiconductor layer. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the waveguide type photodiode structure faces to an end face of the optical waveguide structure. The fourth semiconductor layer is located between the end face of the waveguide type photodiode structure and the end face of the optical waveguide structure. The fourth semiconductor layer contacts the multiplication layer at the end face of the waveguide type photodiode structure.