- Patent Title: Oxide aperture shaping in vertical cavity surface-emitting laser
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Application No.: US17683947Application Date: 2022-03-01
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Publication No.: US11757252B2Publication Date: 2023-09-12
- Inventor: Mirko Hoser , Abram Jakubowicz , Tomi Leinonen
- Applicant: II-VI Delaware, Inc.
- Applicant Address: US DE Wilmington
- Assignee: II-VI Delaware, Inc.
- Current Assignee: II-VI Delaware, Inc.
- Current Assignee Address: US DE Wilmington
- Agent Wendy W. Koba
- The original application number of the division: US16406140 2019.05.08
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/30 ; H01S5/20

Abstract:
A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.
Public/Granted literature
- US20220190558A1 Oxide Aperture Shaping In Vertical Cavity Surface-Emitting Laser Public/Granted day:2022-06-16
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