Invention Grant
- Patent Title: Method of n-type doping carbon nanotube
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Application No.: US17505833Application Date: 2021-10-20
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Publication No.: US11758797B2Publication Date: 2023-09-12
- Inventor: Gao-Tian Lu , Yang Wei , Shou-Shan Fan , Yue-Gang Zhang
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing; TW New Taipei
- Agency: ScienBiziP, P.C.
- Priority: CN 2110838891.8 2021.07.23
- Main IPC: H01L51/50
- IPC: H01L51/50 ; H10K71/30 ; H10K85/20
Abstract:
A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.
Public/Granted literature
- US20230022111A1 METHOD OF N-TYPE DOPING CARBON NANOTUBE Public/Granted day:2023-01-26
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