Invention Grant
- Patent Title: Template, patterning method, and method for manufacturing semiconductor device
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Application No.: US17010350Application Date: 2020-09-02
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Publication No.: US11762285B2Publication Date: 2023-09-19
- Inventor: Anupam Mitra , Masaki Mitsuyasu , Kazuya Fukuhara , Kazuhiro Takahata , Sachiko Kobayashi
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 20048142 2020.03.18
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/20 ; H01L21/027 ; G03F9/00 ; B29C59/02 ; B29C35/08 ; B82Y10/00 ; B29C33/00

Abstract:
According to one embodiment, an imprint lithography template comprises a substrate transparent to ultraviolet light. A first mesa region is on the substrate. A surface of the first mesa region includes a pattern region to be pressed into a photocurable resist film. The pattern region having four sides. A second mesa region is also on the substrate. The first mesa region protrudes from a surface of the second mesa region. A blocking film is adjacent to two sides of the four sides pattern region. The two sides to which the blocking film is adjacent are connected to each other at a corner of the pattern region. The blocking film blocks ultraviolet light.
Public/Granted literature
- US20210294208A1 TEMPLATE, PATTERNING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-09-23
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