A sub-wordline driver for a semiconductor memory device includes a plurality of first active regions spaced apart from each other by a predetermined distance in each of a first direction and a second direction within a first region and a main wordline formed to traverse the plurality of first active regions by extending in the first direction. The main wordline includes a first line formed to extend in the first direction, a second line formed to extend in the first direction, and configured to be spaced apart from the first line by a predetermined distance in the second direction, and a connection line configured to interconnect the first line and the second line in the second direction at an end portion of the first region.