Invention Grant
- Patent Title: Power mode wake-up for memory on different power domains
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Application No.: US17824260Application Date: 2022-05-25
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Publication No.: US11763873B2Publication Date: 2023-09-19
- Inventor: Che-Ju Yeh , Hau-Tai Shieh , Yi-Tzu Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/14 ; G11C11/4072 ; G11C11/4074

Abstract:
A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.
Public/Granted literature
- US20220284941A1 POWER MODE WAKE-UP FOR MEMORY ON DIFFERENT POWER DOMAINS Public/Granted day:2022-09-08
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