Memory device and asynchronous multi-plane independent read operation thereof
Abstract:
In certain aspects, a method for operating a memory device is disclosed. The memory device includes a plurality of memory planes. Whether an instruction is an asynchronous multi-plane independent (AMPI) read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and the AMPI read control signal is directed to a corresponding memory plane of the memory planes. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and the non-AMPI read control signal is directed to each memory plane of the memory planes.
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