Invention Grant
- Patent Title: Memory device and asynchronous multi-plane independent read operation thereof
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Application No.: US17334011Application Date: 2021-05-28
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Publication No.: US11763892B2Publication Date: 2023-09-19
- Inventor: Jialiang Deng , Zhuqin Duan , Lei Shi , Yuesong Pan , Yanlan Liu , Bo Li
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/26 ; G06F3/06 ; G11C16/04 ; G11C16/08 ; H10B41/27 ; H10B43/27

Abstract:
In certain aspects, a method for operating a memory device is disclosed. The memory device includes a plurality of memory planes. Whether an instruction is an asynchronous multi-plane independent (AMPI) read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and the AMPI read control signal is directed to a corresponding memory plane of the memory planes. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and the non-AMPI read control signal is directed to each memory plane of the memory planes.
Public/Granted literature
- US20220310173A1 MEMORY DEVICE AND ASYNCHRONOUS MULTI-PLANE INDEPENDENT READ OPERATION THEREOF Public/Granted day:2022-09-29
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