Invention Grant
- Patent Title: Method of adjusting operating conditions for semiconductor memory device
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Application No.: US17983459Application Date: 2022-11-09
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Publication No.: US11763904B2Publication Date: 2023-09-19
- Inventor: Shinji Suzuki
- Applicant: Kioxia Corporation
- Applicant Address: JP Minato-ku
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20139918 2020.08.21
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/24 ; G11C16/32 ; G11C16/30 ; G11C16/26

Abstract:
A method of adjusting operating conditions includes: a substrate; first conductive layers; a first semiconductor layers facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layers; and an electric charge accumulating layer disposed between the first conductive layers and the first semiconductor layers. At a predetermined timing of a program operation, the second conductive layer which is one of the first conductive layers is supplied with a program voltage or a write pass voltage. The method executes: a first operation that supplies the second conductive layer with the write pass voltage and supplies a third conductive layer which is one of the plurality of first conductive layers with the program voltage; and a second operation that supplies the second conductive layer with a verify voltage and supplies the third conductive layer with a voltage.
Public/Granted literature
- US20230069683A1 METHOD OF ADJUSTING OPERATING CONDITIONS FOR SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2023-03-02
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