Invention Grant
- Patent Title: Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution
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Application No.: US17343686Application Date: 2021-06-09
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Publication No.: US11764067B2Publication Date: 2023-09-19
- Inventor: Chung-Chieh Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US16372096 2019.04.01
- Main IPC: C09K13/02
- IPC: C09K13/02 ; H01L21/3063 ; H01L21/308
Abstract:
The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10−3 M in the etching solution, wherein the ionic strength enhancer includes Li+, Na+, K+, Mg2+, Ca2+, N(CH3)+, or N(C2H5)4+, a solvent, and an etchant.
Public/Granted literature
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