- Patent Title: Cell structure with intermediate metal layers for power supplies
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Application No.: US17728007Application Date: 2022-04-25
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Publication No.: US11764155B2Publication Date: 2023-09-19
- Inventor: Li-Chun Tien , Chih-Liang Chen , Hui-Zhong Zhuang , Shun Li Chen , Ting Yu Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/092 ; H01L21/8238 ; H01L23/522

Abstract:
A cell on an integrated circuit is provided. The cell includes: a fin structure; an intermediate fin structure connection metal track disposed in an intermediate fin structure connection metal layer above the fin structure, the intermediate fin structure connection metal track being connected to the fin structure; and a first intermediate gate connection metal track disposed in an intermediate gate connection metal layer above the intermediate fin structure connection metal layer, the first intermediate gate connection metal track being connected to the intermediate fin structure connection metal track. A first power supply terminal is connected to the first intermediate gate connection metal track.
Public/Granted literature
- US20220328410A1 CELL STRUCTURE WITH INTERMEDIATE METAL LAYERS FOR POWER SUPPLIES Public/Granted day:2022-10-13
Information query
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