Invention Grant
- Patent Title: Gate trench power semiconductor devices having improved deep shield connection patterns
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Application No.: US17092923Application Date: 2020-11-09
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Publication No.: US11764295B2Publication Date: 2023-09-19
- Inventor: Woongsun Kim , Sei-Hyung Ryu , Daniel Jenner Lichtenwalner , Naeem Islam
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/808
Abstract:
A power semiconductor device includes a semiconductor layer structure comprising a drift region of a first conductivity type and a well region of a second conductivity type, a plurality of gate trenches including respective gate insulating layers and gate electrodes therein extending into the drift region, respective shielding patterns of the second conductivity type in respective portions of the drift region adjacent the gate trenches, and respective conduction enhancing regions of the first conductivity type in the respective portions of the drift region. The drift region comprises a first concentration of dopants of the first conductivity type, and the respective conduction enhancing regions comprise a second concentration of the dopants of the first conductivity type that is higher than the first concentration. Related devices and fabrication methods are also discussed.
Public/Granted literature
- US20220149196A1 GATE TRENCH POWER SEMICONDUCTOR DEVICES HAVING IMPROVED DEEP SHIELD CONNECTION PATTERNS Public/Granted day:2022-05-12
Information query
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