Invention Grant
- Patent Title: FinFETs having step sided contact plugs and methods of manufacturing the same
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Application No.: US17560353Application Date: 2021-12-23
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Publication No.: US11764299B2Publication Date: 2023-09-19
- Inventor: Sun Hom Paak , Sung Min Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20150029162 2015.03.02
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/165 ; H01L29/417 ; H01L23/485
Abstract:
A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.
Public/Granted literature
- US20220115537A1 FINFETS HAVING STEP SIDED CONTACT PLUGS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2022-04-14
Information query
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