Invention Grant
- Patent Title: Semiconductor laser device, and method and program for driving the same
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Application No.: US16756551Application Date: 2018-09-20
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Publication No.: US11764542B2Publication Date: 2023-09-19
- Inventor: Yusuke Awane , Katsumi Nishimura , Kyoji Shibuya
- Applicant: HORIBA, Ltd.
- Applicant Address: JP Kyoto
- Assignee: HORIBA, LTD.
- Current Assignee: HORIBA, LTD.
- Current Assignee Address: JP Kyoto
- Agency: Alleman Hall Creasman & Tuttle LLP
- Priority: JP 17240868 2017.12.15
- International Application: PCT/JP2018/034924 2018.09.20
- International Announcement: WO2019/116660A 2019.06.20
- Date entered country: 2020-04-16
- Main IPC: H01S5/06
- IPC: H01S5/06 ; H01S5/024 ; H01S5/0683 ; H01S5/0687 ; H01S5/12 ; H01S5/068 ; H01S5/34

Abstract:
The present invention is intended to reduce variations in oscillation wavenumber of a semiconductor laser element due to the influence of circumferential temperatures. The invention includes a semiconductor laser semiconductor laser element, a temperature control part to control a temperature of the semiconductor laser element, a temperature sensor to detect a temperature of the temperature control part, and a temperature control device to control a supply signal to the temperature control part so that a detected temperature obtained from the temperature sensor reaches a predetermined target temperature. The temperature control device changes a target temperature for the temperature control part depending on a supply signal to the temperature control part.
Public/Granted literature
- US20200295535A1 SEMICONDUCTOR LASER DEVICE, AND METHOD AND PROGRAM FOR DRIVING THE SAME Public/Granted day:2020-09-17
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