Invention Grant
- Patent Title: ESD placement in semiconductor device
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Application No.: US17071562Application Date: 2020-10-15
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Publication No.: US11764571B2Publication Date: 2023-09-19
- Inventor: Haruka Momota , Takashi Ishihara
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02

Abstract:
Disclosed herein is an apparatus that includes a first power ESD protection circuit arranged in a first circuit area; a plurality of data I/O circuits arranged in a second circuit area adjacent to the first circuit area in a first direction; a plurality of data I/O terminals arranged in the second circuit area, each of the plurality of data I/O terminals being coupled to an associated one of the plurality of data I/O circuits; a plurality of first power terminals arranged in the second circuit area; and a first power line extending in the first direction, the first power line coupling the plurality of first power terminals to the first power ESD protection circuit.
Public/Granted literature
- US20220123550A1 ESD PLACEMENT IN SEMICONDUCTOR DEVICE Public/Granted day:2022-04-21
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