Invention Grant
- Patent Title: High-speed high-linearity time-interleaved dynamic operational amplifier circuit
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Application No.: US17386571Application Date: 2021-07-28
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Publication No.: US11764732B2Publication Date: 2023-09-19
- Inventor: Feixiang Xiang , Yuanjun Cen
- Applicant: Chengdu Sino Microelectronics Technology Co., Ltd.
- Applicant Address: CN Chengdu
- Assignee: CHENGDU SINO MICROELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: CHENGDU SINO MICROELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Chengdu
- Agency: Bayramoglu Law Offices LLC
- Priority: CN 2011152637.4 2020.10.26
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03M1/06 ; H03F3/45

Abstract:
A high-speed high-linearity time-interleaved dynamic operational amplifier circuit includes a first current channel and a second current channel. The first current channel includes a first MOS transistor, a second MOS transistor and a third MOS transistor which are sequentially connected in series between a high level and a ground level. The first MOS transistor and the second MOS transistor have opposite conductivity types. A control end of the first MOS transistor is connected to a control end of the second MOS transistor. The second current channel includes a fourth MOS transistor, a fifth MOS transistor and a sixth MOS transistor which are sequentially connected in series between the high level and the ground level. The fourth MOS transistor and the fifth MOS transistor have opposite conductivity types. A control end of the fourth MOS transistor is connected to a control end of the fifth MOS transistor.
Public/Granted literature
- US20220131502A1 HIGH-SPEED HIGH-LINEARITY TIME-INTERLEAVED DYNAMIC OPERATIONAL AMPLIFIER CIRCUIT Public/Granted day:2022-04-28
Information query
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