Invention Grant
- Patent Title: MEMS devices and methods of forming thereof
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Application No.: US17581972Application Date: 2022-01-23
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Publication No.: US11767217B2Publication Date: 2023-09-26
- Inventor: Ranganathan Nagarajan , Jia Jie Xia , Rakesh Kumar , Bevita Kallupalathinkal Chandran
- Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
- Current Assignee Address: SG Singapore
- Agent Winston Hsu
- The original application number of the division: US16675245 2019.11.06
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
A method of forming a MEMS device includes providing a substrate having a device stopper. The device stopper is integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may be formed in the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be formed over the thermal dielectric isolation layer and the device cavity.
Public/Granted literature
- US20220144625A1 MEMS DEVICES AND METHODS OF FORMING THEREOF Public/Granted day:2022-05-12
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