Invention Grant
- Patent Title: Semiconductor structure including scribe line structures and method for fabricating the same
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Application No.: US16932622Application Date: 2020-07-17
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Publication No.: US11767219B2Publication Date: 2023-09-26
- Inventor: Wei-Cheng Shen , Yi-Hsien Chang , Yi-Heng Tsai , Chun-Ren Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- The original application number of the division: US15168848 2016.05.31
- Main IPC: B81C1/00
- IPC: B81C1/00

Abstract:
A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.
Public/Granted literature
- US20200346926A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-11-05
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