Invention Grant
- Patent Title: Group-III nitride semiconductor nanoparticles and production method thereof
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Application No.: US17489172Application Date: 2021-09-29
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Publication No.: US11767469B2Publication Date: 2023-09-26
- Inventor: Takuya Kazama , Wataru Tamura , Yasuyuki Miyake , Takayuki Omori , Atsushi Muramatsu , Kiyoshi Kanie
- Applicant: STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP 20164727 2020.09.30
- Main IPC: C09K11/62
- IPC: C09K11/62 ; C01B21/06 ; C09K11/08 ; C09K11/64 ; B82Y20/00 ; B82Y40/00

Abstract:
Provided are group-III nitride nanoparticles that prevent the piezoelectric field caused by strains on the nanoparticles, achieving good luminous efficiency. The group-III nitride nanoparticle represented by AlxGayInzN (0≤x, y, z≤1) incorporating two crystal structures; a wurtzite structure and a zincblende structure, in a single particle. As another example, the group-III nitride nanoparticle has a core-shell structure with a core and a shell, in which the particle constituting the core contains two crystal structures; the wurtzite structure and the zincblende structure, in the particle. Nanoparticles containing the two crystal structures can be produced by using a phosphorus-containing solvent as a reaction solvent, and the mixture ratio of the two crystal structures, (wurtzite structure)/(zincblende structure), is 20/80 or higher.
Public/Granted literature
- US20220098480A1 GROUP-III NITRIDE SEMICONDUCTOR NANOPARTICLES AND PRODUCTION METHOD THEREOF Public/Granted day:2022-03-31
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