Invention Grant
- Patent Title: Low-dislocation bulk GaN crystal and method of fabricating same
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Application No.: US17306239Application Date: 2021-05-03
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Publication No.: US11767609B2Publication Date: 2023-09-26
- Inventor: Tadao Hashimoto
- Applicant: SixPoint Materials, Inc.
- Applicant Address: US CA Buellton
- Assignee: SixPoint Materials, Inc.
- Current Assignee: SixPoint Materials, Inc.
- Current Assignee Address: US CA Buellton
- Agency: STRATEGIC INNOVATION IP LAW OFFICES, P.C.
- Main IPC: C30B7/10
- IPC: C30B7/10 ; C25F3/12 ; C30B29/40
Abstract:
GaN wafers and bulk crystal have dislocation density approximately 1/10 of dislocation density of seed used to form the bulk crystal and wafers. Masks are formed selectively on GaN seed dislocations, and new GaN grown on the seed has fewer dislocations and often 1/10 or less of dislocations present in seed.
Public/Granted literature
- US20210355598A1 LOW-DISLOCATION BULK GAN CRYSTAL AND METHOD OF FABRICATING SAME Public/Granted day:2021-11-18
Information query
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