Invention Grant
- Patent Title: Pin access hybrid cell height design
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Application No.: US17332646Application Date: 2021-05-27
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Publication No.: US11768991B2Publication Date: 2023-09-26
- Inventor: Kam-Tou Sio , Jiann-Tyng Tzeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/00
- IPC: G06F30/00 ; G06F30/394 ; G03F1/36 ; G06F30/392 ; G06F30/3947 ; G06F30/3953 ; G06F111/04 ; G06F119/18

Abstract:
A method of generating a layout diagram for an integrated circuit. The method includes arranging a plurality of cells in the layout diagram. The method further includes placing a plurality of cell pins over a plurality of selected via placement points in a first cell of the plurality of cells, wherein at least one cell pin of the plurality of cell pins extends along a routing track of a plurality of routing tracks across a boundary of the first cell and into a second cell of the plurality of cells abutting the first cell.
Public/Granted literature
- US20210286927A1 PIN ACCESS HYBRID CELL HEIGHT DESIGN Public/Granted day:2021-09-16
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